Thursday, February 21, 2019

[ASAP] Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars

TOC Graphic

The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.8b11830
jpccck?d=yIl2AUoC8zA


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